Global Insulated-Gate Bipolar Transistors (IGBTs) Market is valued at approximately USD XX billion in 2021 and is anticipated to grow with a healthy growth rate of more than XX % over the forecast period 2022-2028. Insulated-Gate Bipolar Transistor (IGBT) is a type of power semiconductor that is used as an electronic switch device. It is also known as minority carrier device that enables faster switching rate and offers greater efficiency. The increasing demand for electric vehicles and increasing concerns regarding vehicular emissions and depletion of non-renewable energy has led to the adoption of Insulated-Gate Bipolar Transistors (IGBTs) across the forecast period. For Instance: As per the IBEF, With the present and projected level of EV penetration in the country, EVs in India could represent a Rs 500 billion (US$ 7.09 billion) opportunity by 2025. Two- and three-wheelers will lead the electrification movement in India in the medium term. Also, with the Government initiatives to establish HVDC and smart grid, the adoption & demand for Insulated-Gate Bipolar Transistors (IGBTs) is likely to increase the market growth during the forecast period. However, current leakage at high temperature impedes the growth of the market over the forecast period of 2022-2028.

The key regions considered for the Global Insulated-Gate Bipolar Transistors (IGBTs) Market study include Asia Pacific, North America, Europe, Latin America and Rest of the World. Europe is the leading region across the world in terms of market share owing to the investment in improving the infrastructure of electric vehicles, such as Battery Electric Vehicle (BEV), Hybrid Electric Vehicle (HEV) & Plug-In Hybrid Electric Vehicle (PHEV). Whereas, Asia-Pacific is also anticipated to exhibit the highest growth rate over the forecast period 2022-2028. Factors such as rising population, growing investment in electric vehicle infrastructure such as power stations would create lucrative growth prospects for the Insulated-Gate Bipolar Transistors (IGBTs) market across Asia-Pacific region.

Major market players included in this report are:

NXP Semiconductors N.V.

ABB Group

STMicroelectronics N.V.

Toshiba Corporation

IXYS Corporation

Renesas Electronics Corp.

Semikron International GmbH

Mitsubishi Electric Corp.

Infineon Technologies AG

Fuji Electric Co. Ltd.

The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. The detailed segments and sub-segment of the market are explained below:

By Application:

Energy & Power

Consumer Electronics

Inverter & UPS

Electric Vehicle

Industrial System

Others

By Type:

Discrete IGBT

IGBT Module

By Region:

North America

U.S.

Canada

Europe

UK

Germany

France

Spain

Italy

ROE

Asia Pacific

China

India

Japan

Australia

South Korea

RoAPAC

Latin America

Brazil

Mexico

Rest of the World

Furthermore, years considered for the study are as follows:

Historical year - 2018, 2019, 2020

Base year - 2021

Forecast period - 2022 to 2028

Target Audience of the Global Insulated-Gate Bipolar Transistors (IGBTs) Market in Market Study:

Key Consulting Companies & Advisors

Large, medium-sized, and small enterprises

Venture capitalists

Value-Added Resellers (VARs)

Third-party knowledge providers

Investment bankers

Investors