Global Power GaN Devices Market is valued at approximately USD 110.3 million in 2021 and is anticipated to grow with a healthy growth rate of more than 20.00 % over the forecast period 2022-2028. Power GaN Devices or say Gallium nitride (GaN) transistors have evolved as an enhanced performance substitute of silicon-based transistors, owing to their ability to fabricate more compact devices for a given resistance value and breakdown voltage as compared to silicon devices. These power devices can attain extremely low-resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicles (EV), hybrid electric vehicles (HEV), photovoltaic inverters, and RF switching. The increasing demand for fast switching devices and growing demand from EVs and mobility sectors has led to the adoption of Power GaN Devices across the forecast period. For Instance: as per the IBEF, EVs in India could represent a Rs 500 billion (US$ 7.09 billion) opportunity by 2025. Two- and three-wheelers will lead the electrification movement in India in the medium term. Also, with the government initiatives in HVDC and smart grid and increase in requirement of GaN devices for commercial RF applications, the adoption & demand for Power GaN Devices is likely to increase the market growth during the forecast period. However, lack of availability of GaN material and high costs impede the growth of the market over the forecast period of 2022-2028.

The key regions considered for the Global Power Gan Devices Market study include Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading region across the world in terms of market share owing to the heavy investment in smart grid technology to improve their electrical networks. Whereas, Asia-Pacific is also anticipated to exhibit the highest growth rate over the forecast period 2022-2028. Factors such as rising disposable income, environmental concerns would create lucrative growth prospects for the Power GaN Devices Market across Asia-Pacific region.

Major market players included in this report are:

VisIC Technologies

Texas Instruments

Efficient Power Conversion Corporation, Inc.

Fujitsu limited

GaN Power Inc.

GaN systems

Infineon Technologies

Navitas Semiconductor

On Semiconductors

Panasonic Corporation

The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. The detailed segments and sub-segment of the market are explained below:

By Type:

Integrated Power Device

Discrete Power Device

By Voltage:

Below 200V

200V to 600V

Above 600V

By Region:

North America

U.S.

Canada

Europe

UK

Germany

France

Spain

Italy

ROE

Asia Pacific

China

India

Japan

Australia

South Korea

RoAPAC

Latin America

Brazil

Mexico

Rest of the World

Furthermore, years considered for the study are as follows:

Historical year - 2018, 2019, 2020

Base year - 2021

Forecast period - 2022 to 2028

Target Audience of the Global Power GaN Devices Market in Market Study:

Key Consulting Companies & Advisors

Large, medium-sized, and small enterprises

Venture capitalists

Value-Added Resellers (VARs)

Third-party knowledge providers

Investment bankers

Investors